Аналогічні транзистори від TSMC
Developers from Peking University have announced the creation of the world’s first two-dimensional low-power transistor GAAFET.
Chinese researchers call their own development a «multilayer, lamellar, single-crystal two-dimensional GAA configuration.
«It is the fastest and most efficient transistor ever created If chip innovation based on existing materials is considered a «shortcut», then our development of transistors based on 2D materials is like a «lane change»», — says study leader Prof Pen Hailin.
The developers assure that their transistor has outperformed similar designs by Intel, TSMC, Samsung, and other manufacturers. Field effect transistors Gate-all-around, abbreviated as GAAFET, is the next stage in the evolution of transistor technology after MOSFET and FINFET.
Latest innovations in the production of transistors have been achieved mainly through improved source control and better gate coupling. With MOSFETs, the gate contacts the source in only one plane, in FINFET — gates touch three planes, the scheme Gate-all-around covers all sources that intersect at the gates.
Such transistors are nothing new. Transistor production technology is required to manufacture chips at the level of 3 nanometers and below. However, the key feature of the Chinese development is two-dimensional transistors, which is due to the use of alternative silicon elements.
As alternatives to silicon Chinese developers used semiconductor material bismuth oxyselenide (Bi₂O₂Se), is capable of being a two-dimensional semiconductor. Such semiconductors are more flexible and durable when they are small in size, compared to silicon, which demonstrates reduced carrier mobility even at the level of 10 nanometers.
Due to the trade war with the United States, China has been deprived of access to technologies such as EUV lithography for the production of integrated circuits. In this regard, China has invested heavily in the development of alternative technologies.
As the US may tighten its trade restrictions on China’s access to technology, including a potential ban on GAAFET technology, the Chinese tech industry is trying to play it safe.
The article was published in the journal Nature
Source: tomsHardware
