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Researchers from Fudan University in China have created the world’s fastest flash memory, which performs about 25 billion operations per second.
The device, called «PoX», takes 400 picoseconds (0.0000000004 sec) to store one bit of information. Usually, traditional static and dynamic RAM (SRAM, DRAM) records data at a speed of 1 to 10 nanoseconds, but does not retain information in the event of a sudden power outage. Flash drives don’t need a power source to store data, but they take micro and milliseconds to store, which is too slow for modern artificial intelligence accelerators that send terabytes of data in real time.
Scientists from Fudan University, led by Professor Zhou Peng redesigned the internal structure of the flash drive, replacing silicon channels with two-dimensional Dirac graphene, using its accelerated charge transfer properties. By tuning the «Gaussian length» channel, the team achieved two-dimensional superinjection, which is a virtually limitless burst of charge into the storage layer that bypasses the classic injection bottleneck.
According to Professor Zhou Peng, thanks to AI-based process optimization, his team managed to bring the non-volatile flash drive to almost its theoretical limit PoX saves data without backup power supply, which is a critical property for next-generation AI systems and systems with limited battery properties.
If mass-produced, PoX memory can replace individual high-speed SRAM caches in AI chips, reducing space and power. It can provide instant connectivity to low-powered laptops and phones, as well as support for databases that store entire work sets in permanent RAM.
The team did not disclose data on endurance or performance, but the graphene channel is expected to be compatible with existing two-dimensional materials processes. The developers are currently scale the cell architecture and conduct demonstrations at the array level.
Source: Interesting Engineering