The future of processors: MIT has developed a technology for creating chips from gallium nitride
Researchers from the Massachusetts Institute of Technology (MIT) in the United States have developed a relatively inexpensive and scalable technology for combining high-speed gallium nitride transistors with standard silicon chips.
Electronics for Venus exploration: Gallium nitride semiconductors tested at 500℃
Gallium nitride is touted as the next-generation semiconductor that could one day replace silicon, but research into this material is still in its infancy. Researchers from Massachusetts Institute of Technology and other US institutes decided to take the technology to the next level and tested the material at temperatures above 500℃.
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