SK hynix announces 300 TB SSD and other technologies for data centers and AI
SK hynix has announced at a press conference in Seoul that it is creating a massive 300TB SSD. The SSD was announced was announced as part of a broad portfolio of devices and technologies for data centers and AI.
DRAM and NAND in a single chip — researchers have created phase-shifting memories that do not consume much power
Researchers at the Korea Advanced Institute of Science and Technology (KAIST) in South Korea have developed a new type of phase-shifting memory that does not have the drawbacks of previous iterations of this technology.
Samsung starts production of new generation V-NAND memory: +33% performance, -10% power consumption
Samsung announced announced the start of mass production of 9th generation V-NAND flash memory, which offers a 33% increase over current technology. Production of 1TB TCL V-NAND will start this month, while QLC will arrive in the second half of 2024. Earlier, the start of production was confirmed by unofficial sources, from which it is also known…
GDDR7 graphics memory standard specifications released — bandwidth up to 192 GB/s
JEDEC has published the specifications for the GDDR7 memory standard. GDDR7 is expected to become the memory of choice for high-end RDNA 4 and Blackwell GPUs, which are rumored to be released next year and will compete for a place on our list of the best graphics cards.
Samsung introduces new HBM3E 12H memory chip with «highest capacity» for AI
Samsung Electronics announced a new high-bandwidth memory chip that has the «highest capacity» in the industry. The South Korean giant claims that the HBM3E 12H «increases performance by more than 50%».